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| PXT8550 Datasheet, PDF (1/2 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(PNP) | |||
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Plastic-Encapsulate Transistors
FEATURES
Complimentary to PXT8050
Collector current: IC=1.5A
MARKING: Y2
PXT8550 (PNP)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
VCBO
-40
V
VCEO
-25
V
VEBO
-5
V
IC
-1500
mA
PC
1000
mW
TJ
150
Tstg
-55-150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
VBEF
fT
Cob
Test conditions
Min
IC= 100μA, IE=0
-40
IC= 0.1mA, IB=0
-25
IE= 100μA, IC=0
-5
VCB= 40 V , IE=0
VCE= 20 V , IB=0
VEB= 5V, IC=0
VCE= -1V, IC= -100mA
85
VCE= -1V, IC= -800mA
50
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
IB=-1A
VCE=-10V,IC=-50mA,f=30MHz 100
VCB=-10V,IE=0,f=1MHz
Typ Max
-0.1
-0.1
-0.1
400
-0.5
-1.2
-1
-1.
5
20
Unit
V
V
V
μA
μA
μA
V
V
V
V
MHz
pF
CLASSIFICATION OF HFE
Rank
B
Range
85-160
C
120-200
D
160-300
D1
300-400
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
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