 English |
|
|
|
|
|
|
|
| PXT8050 Datasheet, PDF (1/2 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(NPN) | |||
| |||
|
Plastic-Encapsulate Transistors
FEATURES
Complimentary to PXT8550
Collector current: IC=1.5A
MARKING: Y1
PXT8050 (NPN)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
VCBO
40
V
VCEO
25
V
VEBO
5
V
IC
1500
mA
PC
1000
mW
TJ
150
Tstg
-55-150
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
Symbol
Test conditions
Min Typ Max Unit
VCBO
IC= 100μA, IE=0
40
V
VCEO
IC= 0.1mA, IB=0
25
V
VEBO
IE= 100μA, IC=0
5
V
ICBO
VCB= 40 V , IE=0
0.1
μA
ICEO
VCE= 20 V , IB=0
0.1
μA
IEBO
VEB= 5V, IC=0
0.1
μA
hFE(1)
VCE= 1V, IC= 100mA
85
400
hFE(2)
VCE= 1V, IC= 800mA
50
VCE(sat)
IC=800mA, IB=80mA
0.5
V
VBE(sat)
IC=800mA, IB=80mA
1.2
V
VBE
VCE=1V, IC=10mA
1
V
VBEF
fT
IB=1A
VCE=10V,IC=50mA,f=30MHz 100
1.5
V
5
MHz
Cob
VCB=10V,IE=0,f=1MHz
15
pF
CLASSIFICATION OF HFE
Rank
B
Range
85-160
C
120-200
D
160-300
D1
300-400
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P1
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese