MMBTA42 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN high-voltage transistor

Plastic-Encapsulate Transistors
FEATURES
High breakdown voltage
Low collector-emitter saturation voltage
Complementary to MMBTA92 (PNP)
MMBTA42(NPN)
MARKING: 1D
Maximum Ratings (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
RÓ¨JA
TJ
Tstg
300
300
5
0.3
0.35
357
150
-55to +150
Units
V
V
V
A
W
/mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE(sat)
fT
IC= 100μA, IE=0
IC= 1mA, IB=0
IE= 100μA, IC=0
VCB=200V, IE=0
VEB= 5V, IC=0
VCE= 10V, IC= 1mA
VCE= 10V, IC=10mA
VCE=10V, IC=30mA
IC=20mA, IB= 2mA
IC= 20mA, IB=2mA
VCE= 20V, IC= 10mA,
f=30MHz
Min Max Unit
300
V
300
V
5
V
0.25
μA
0.1
μA
60
100
200
60
0.2
V
0.9
V
50
MHz
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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