MMBTA13 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SURFACE MOUNT DARLINGTON TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
• Darlington Amplifier
MMBTA13/14 (NPN)
Marking:
MMBTA13 :K2D
MMBTA14 :K3D
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Thermal Resistance Junction to Ambient
unless otherwise noted)
Symbol
Value
VCBO
30
VCEO
30
VEBO
10
IC
0.3
PC
0.3
TJ
150
Tstg
-55to +150
RθJA
417
Unit
V
V
V
A
W
/W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Max
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
VCBO
IC= 100μA, IE=0
30
VCEO
IC= 100uA, IB=0
30
VEBO
IE= 100μA, IC=0
10
ICBO*
VCB=30 V , IE=0
0.1
IEBO*
hFE(1) *
VEB= 10V , IC=0
VCE=5V, IC= 10mA
0.1
MMBTA13 5000
MMBTA14 10000
hFE(2) *
VCE=5V, IC= 100mA
MMBTA13 10000
MMBTA14 20000
VCE (sat)*
IC=100mA, IB=0.1mA
1.5
VBE (sat) * IC=100mA, IB=0.1mA
2
VBE *
fT
VCE=5V,IC= 100mA
2.0
VCE=5V, IC= 10mA ,f=100MHz
125
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
12
* Pulse Test : pulse width≤300μs,duty cycle≤2%.
Unit
V
V
V
μA
μA
V
V
V
MHz
pF
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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