MMBT5401 Datasheet, PDF (1/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Complementary to MMBT5551
Ideal for medium power amplification and switching
MMBT5401 (PNP)
MARKING: 2L
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-160
V_CEO
-150
V_EBO
-5
I_C
-0.6
PC
0.3
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions Min
Collector-base breakdown voltage
VCBO IC= -100μA, IE=0
-160
Collector-emitter breakdown voltage
VCEO IC= -1mA, IB=0
-150
Emitter-base breakdown voltage
VEBO IE= -10μA, IC=0
-5
Collector cut-off current
Emitter cut-off current
ICB VCB=-120 V , IE=0
O
IEB VEB=-4V , IC=0
O
hFE1 VCE= -5V, IC= -1mA
80
DC current gain
hFE2 VCE= -5V, IC=-10mA 100
hFE3 VCE= -5V, IC=-50mA 50
Collector-emitter saturation voltage
VCE(sat) IC=-50 mA, IB= -5mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= -50 mA, IB=
fT
V-5CmEA= -5V, IC=
100
-10mA
f=30MHz
Max Unit
V
V
V
-0.1
μA
-0.1
μA
300
-0.5
V
-1
V
MHz
MAKO Semiconductor Co., Limited
4008-378-873
http://www.makosemi.hk/ _Page:P2-P1