MMBT4401 Datasheet, PDF (1/2 Pages) Transys Electronics – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Switching transistor
MMBT4401 ^(NPN)
Marking:2X
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
60
V_CEO
40
V_EBO
6
I_C
600
PC
300
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions Min Max Unit
Collector-base breakdown voltage
VCBO IC= 100μA, IE=0
60
V
Collector-emitter breakdown voltage
VCEO IC= 1mA, IB=0
40
V
Emitter-base breakdown voltage
VEBO IE= 100μA, IC=0
6
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
ICB VCB=50 V, IE=0
0.1 μA
O
ICE VCE=30 V, IB=0
0.1 μA
O
IEB VEB=5V, IC=0
0.1 μA
O
hF VCE=1V, IC=150mA
100 300
E
VCE(sat) IC=150mA, IB=15mA
0.4
V
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC= 150mA, IB=15mA
0.95
V
VCE= 10V, IC= 20mA
fT
250
f = 100MHz
MHz
MAKO Semiconductor Co., Limited 4008-378-873
http://www.makosemi.hk/
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