MMBT3906 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP switching transistor

Plastic-Encapsulate Transistors
FEATURES
As complementary type the PNP transistor MMBT3904 is recommended
Epitaxial planar die construction
MARKING: 2A
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Value
Collector-Base Voltage
V_CBO
-40
Collector-Emitter Voltage
V_CEO
-40
Emitter-Base Voltage
V_EBO
6
Collector Current -Continuous
I_C
-200
Collector Power Dissipation
P_C
200
Thermal Resistance Junction to Ambient R_θJA
625
Junction Temperature
Tj
150
Storage Temperature
Tstg
-55 to +150
Unit
V
V
V
mA
mW
/W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC= 10μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC= 1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=10μA, IC=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Collector cut-off current
ICEO
VCE=30V,VBE(off)=3V
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE(1)
VCE=1V, IC=10mA
DC current gain
hFE(2)
VCE=1V, IC= 100mA
Collector-emitter saturation voltage
VCE(sat)
IC=50mA, IB= 5mA
Base-emitter saturation voltage
VBE(sat)
IC= 50mA, IB= 5mA
Transition frequency
fT
VCE=20V, IC=10mA,f=100MHz
Delay Time
Rise Time
td
VCC=3V,VBE=-0.5V
tr
IC=10mA, IB1=-IB2=1.0mA
Storage Time
Fall Time
ts
VCC=3V,IC=10mA,
tf
IB1=-IB2=1mA
CLASSIFICATION OF
Rank
Range
O
120-200
Y
200-300
MMBT3906 (PNP)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min
Max
Unit
-40
v
-40
v
-5
v
-0.1
uA
50
uA
-0.1
uA
100
300
30
-0.4
v
-0.95
v
300
MHZ
35
nS
35
nS
225
nS
75
nS
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ _Page:P2-P1