MMBT3904 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN switching transistor

MAKO SEMICONDUCTOR CO.,LIMITED
Plastic-Encapsulate Transistors
MMBT3904 TRANSISTOR (NPN)
FEATURES
z Complementary to MMBT3906
SOT–23
MARKING:1AM/ 1A / *04
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_C
R_ΘJA
T_j
T_stg
T_OPR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Operating Temperature
60
40
6
200
200
625
150
-55～+150
0～+70
V
V
V
mA
mW
℃/W
℃
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
CLASSIFICATION OF h_FE(1)
HFE
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CEX
I_CBO
I_EBO
h_FE(1)
h_FE(2)
h_FE(3)
V_CE(sat)
V_BE(sat)
f_T
t_d
t_r
t_s
t_f
Test conditions
I_C=10µA, I_E=0
I_C=1mA, I_B=0
I_E=10µA, I_C=0
KI ^{VCE=30V, VEB(off)=3V}
V_CB= 60V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=10mA
V_CE=1V, I_C=50mA
V_CE=1V, I_C=100mA
I_C=50mA, I_B=5mA
I_C=50mA, I_B=5mA
V_CE=20V,I_C=10mA, f=100MHz
V_CC=3V, V_BE(off)=-0.5V I_C=10mA,
I_B1=1mA
V_CC=3V, V_BE(off)=-0.5V I_C=10mA,
I_B1=1mA
V_CC=3V, I_C=10mA, I_B1= I_B2=1mA
V_CC=3V, I_C=10mA, I_B1= I_B2=1mA
100-300
RANK
RANGE
L
100–200
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
60
40
6
100
60
30
300
H
200–300
Max Unit
V
V
V
50
nA
100
nA
100
nA
300
0.3
V
0.95
V
MHz
35
ns
35
ns
200
ns
50
ns
LL K
KL