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M28S Datasheet, PDF (1/2 Pages) Unisonic Technologies – AUDIO OUTPUT DRIVER AMPLIFIER
Plastic-Encapsulate Transistors
FEATURES
Excellent HFE Linearity.
High DC current gain
M28S (NPN)
Marking : 28S
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
DCollector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
40
VCEO
20
VEBO
6
IC
1000
PC
200
TJ
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
IC=100μA,IE=0
IC=1mA,IB=0
IE=100μA,IC=0
VCB=35V,IE=0
VEB=5V,IC=0
VCE=1V,IC=1mA
VCE=1V,IC=0.1A
VCE=1V,IC=0.3A
VCE=1V,IC=0.5A
IC=600mA, IB=20mA
VCE=10V, IC=50mA
VCB=10V,IE=0,f=1MHz
Min Typ Max Unit
40
V
20
V
6
V
0.1
μA
0.1
μA
290
300
300
1000
300
0.55
V
100
MHz
9
pF
CLASSIFICATION OF hFE
Rank
Range
B
300-550
C
500-700
D
650-1000
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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