KTC4075 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Plastic-Encapsulate Transistors
FEATURES
• Excellent hFE linearity
• High hFE
• Low Noise
• Complementary to KTA2014
KTC4075 (NPN)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
60
VCEO
50
VEBO
5
IC
0.15
PC
0.1
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
VCBO
VCEO
VEBO
ICBO
IEBO
hFE
VCEsat
fT
Cob
NF
IC = 100μA, IE=0
IC = 1mA, IB=0
IE= 100μA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE= 6V, IC=2mA
IC=100mA, IB= 10mA
VCE=10V, IC= 1mA
VCE=10V, IE=0, f=1MHz
VCE=6V,IE=0.1mA, f=1KHz,RG=10KΩ
Min Max Unit
60
V
50
V
5
V
0.1
μA
0.1
μA
70
700
0.25
V
80
MHz
3.5
pF
10
dB
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LGR
BL
350-700
LBL
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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