KTC3876 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Plastic-Encapsulate Transistors
FEATURES
• High hFE
• Complementary to KTA1505
KTC3876(NPN)
Maximum Ratings (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
35
VCEO
30
VEBO
5
IC
0.5
PC
0.2
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
VCBO
VCEO
VEBO
ICBO
IEBO
hFE1
hFE2
IC=100μA, IE=0
IC= 1mA, IB=0
IE= 100μA, IC=0
VCB= 35V, IE=0
VEB= 5V, IC=0
VCE=1V, IC= 100mA
VCE=6V, IC= 400mA
35
30
5
70
O 25
Y 40
V
V
V
0.1
uA
0.1
uA
400
Collector-emitter saturation voltage
base-emitter voltage
Transition frequency
Collector output capacitance
VCE(sat)
VBE
fT
Cob
IC=100mA, IB= 10mA
VCE=1V, IB= 100mA
VCE=6V, IC=20mA
VCB=6V,IE=0,f=1MHZ
0.25
V
1
V
300
MHz
7
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
WO
Y
120-240
WY
G
200-400
WG
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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