KTA1505 Datasheet, PDF (1/2 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)

Plastic-Encapsulate Transistors
FEATURES
• Excellent hFE linearity:
• Complementary to KTC3876
KTA1505 (PNP)
Maximum Ratings (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-35
VCEO
-30
VEBO
-5
IC
-0.5
PC
0.15
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=-100μA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=-1mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
Collector cut-off current
ICBO
VCB=-35V,IE=0
Emitter cut-off current
IEBO
VEB=-5V,IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-1V,IC=-100mA
VCE=-6V,IC=-400mA
Collector-emitter saturation voltage
VCE(sat) IC=-100mA,IB=-10mA
Base-emitter voltage
VBE VCE=-1V,IC=-100mA
Transition frequency
fT
VCE=-6V,IC=-20mA
Collector output capacitance
Cob
VCB=-6V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
AZO
Y
120-240
AZY
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
-35
V
-30
V
-5
V
-0.1
μA
-0.1
μA
70
400
25
-0.25
V
-1
V
200
MHz
13
pF
G
200-400
AZG
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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