C945 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors
FEATURES
Complementary to A733
C945 ^(NPN)
MARKING: CR
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
60
V_CEO
50
V_EBO
5
I_C
150
PC
0.4
T_J
150
Tstg
-55 to +150
Unit
V
V
V
mA
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
VCBO
IC=1mA , IE=0
60
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
VCEO
IC=100uA , IB=0
50
VEBO
IE=100mA, IC=0
5
ICB
VCB=60V, IE=0
ICOE
VCE=45V
IEOB
VEB=5V , IC=0
hFOE(1) VCE=6 V , IC=1mA
70
hFE(2) VCE=6 V , IC=0.1mA
40
VCE(sat) IC=100mA, IB=10mA
VBE(sat) IC=100mA, IB=10mA
fT
VCE=6V,IC=10mA,f =30 MHz 200
Cob
VCB=10V,IE=0,f=1MHZ
VCE=6V,IC=0.1mA
NF
RG=10kΩ,f=1kMHZ
V
V
0.1
uA
0.1
uA
0.1
uA
700
0.3
V
1
V
MHz
3.0
pF
10
dB
CLASSIFICATION OF h_FE
Rank
Range
O
70-140
Y
120-240
GR
200-400
BL
350-700
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ _Page:P2-P1