B5819W Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

Plastic-Encapsulate Diodes
SCHOTTKY BARRIER DIODE
B5819W
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
MARKING: S4/SL
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
V_RM
V_RRM
Working Peak Reverse Voltage
V_RWM
DC Blocking
RMS Reverse Voltage
V_R
R(RMS)
Average Rectified Output Current
I_O
Peak forward surge current @=8.3ms
I_FSM
Repetitive Peak Forward Current
I_FRM
Power Dissipation
Thermal Resistance Junction to Ambient
Storage temperature
Pd
R_θJA
T_STG
-
+
SOD-123
Value
40
40
40
40
28
1
9
1.5
500
250
-65~+150
Units
V
V
V
V
V
A
A
A
mW
/W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Reverse breakdown voltage
Reverse voltage leakage current
V(BR)
IR
I _R = 1mA
V_R= 40V
Forward voltage
Diode capacitance
VF
I_F =1A
I_F =3A
CD
VR=4V, f=1MHz
MIN
40
MAX
1
0.6
0.9
120
UNIT
V
mA
V
V
pF
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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