B5817WS Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

Plastic-Encapsulate Diodes
SCHOTTKY BARRIER DIODE
FEATURES
or use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
B5817WS/B5818WS/B5819WS
-
+
MARKING B5817WS: SJ B5818WS:SK B5819WS: SL
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Paramete
r
Non-Repetitive Peak reverse voltage
Symbol ^B5817WS
VRM
20
B5818WS
30
Peak repetitive Peak reverse voltage
VRRM
Working Peak Reverse Voltage
VRWM
20
30
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
14
21
Average Rectified Output Current
Peak forward surge current @=8.3ms
Repetitive Peak Forward Current
Power Dissipation
ThermalResistanc Junction to Ambient
Storage temperature
IO
IFSM
IFR
M
Pd
RθJA
TSTG
1
9
1.5
250
500
-65~+150
SOD-323
B5819WS
40
40
28
Unit
V
V
V
A
A
A
mW
/W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Symbol Test conditions
V(BR) ^{IR= 1mA}
B5817WS
B5818WS
B5819WS
VR=20V
B5817WS
IR
VR=30V
B5818WS
VR=40V
B5819WS
Min
20
30
40
Forward voltage
B5817WS
B5818WS
VF
B5819WS
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
Diode capacitance
C VR=4V, f=1MHz
D
Max
1
0.45
0.75
0.55
0.875
0.6
0.9
120
Unit
V
mA
V
V
V
pF
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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