2SC2883 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APLICATIONS)

Plastic-Encapsulate Transistors
FEATURES
• Low voltage
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
30
VCEO
30
VEBO
5
IC
1.5
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=1mA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=10mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=1mA,IC=0
Collector cut-off current
ICBO
VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=2V,IC=0.5A
Collector-emitter saturation voltage
VCE(sat) IC=1.5A,IB=30mA
Base-emitter voltage
VBE VCE=2V,IC=0.5A
Transition frequency
fT
VCE=2V,IC=500mA
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
O
100-200
GO
2SC2883 (NPN)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
30
V
30
V
5
V
0.1
μA
0.1
μA
100
320
2
V
1
V
120
MHz
40
pF
Y
160-320
GY
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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