2SC1623 Datasheet, PDF (1/2 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES
High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA
High voltage:VCEO=50V
Plastic-Encapsulate Transistors
C1623 ^(NPN)
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
60
V_CEO
50
V_EBO
5
I_C
0.1
PC
0.2
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
VCBO IC=100μA,IE=0
Collector-emitter breakdown voltage
VCEO IC=1mA,IB=0
Emitter-base breakdown voltage
VEBO IE=100μA,IC=0
Collector cut-off current
ICBO VCB=60V,IE=0
Emitter cut-off current
IEBO VEB=5V,IC=0
DC current gain
hFE VCE=6V,IC=1mA
Collector-emitter saturation voltage
VCE(sat) IC=100mA,IB=10mA
Base-emitter saturation voltage
VBE(sat) IC=100mA,IB=10mA
Transition frequency
fT VCE=6V,IC=10mA
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min Typ Max Unit
60
V
50
V
5
V
0.1
μA
0.1
μA
90 200 600
0.3
V
1
V
250
MHz
CLASSIFICATIONOF h_FE
Rank
L4
Range
90-180
L5
135-270
L6
200-400
L7
300-600
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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