2SB766A Datasheet, PDF (1/2 Pages) Unisonic Technologies – LOW FREQUENCY OUTPUT AMPLIFICATION

Plastic-Encapsulate Transistors
FEATURES
• Large collector power dissipation PC
• Complementary to 2SD874A
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-60
VCEO
-50
VEBO
-5
IC
-1
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-10μA,IE=0
Ic=-2mA,IB=0
IE=-10μA,IC=0
VCB=-20V,IE=0
VEB=-4V,IC=0
VCE=-10V,IC=-500mA
VCE=-5V,IC=-1A
IC=-500mA,IB=-50mA
IC=-500mA,IB=-50mA
VCE=-10V,IC=-50mA,f=200MHz
VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
85-170
BQ
R
120-240
BR
2SB766A (PNP)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
-60
V
-50
V
-5
V
-0.1
μA
-0.1
μA
85
340
50
-0.2 -0.4
V
-0.85 -1.2
V
200
MHz
20
30
pF
S
170-340
BS
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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