2SB766 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency output amplification)

Plastic-Encapsulate Transistors
FEATURES
• Large collector power dissipation PC
• Complementary to 2SD874
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-30
VCEO
-25
VEBO
-5
IC
-1
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC =-10μA, IE=0
Collector-emitter breakdown voltage
VCEO
IC =-2mA, IB=0
Emitter-base breakdown voltage
VEBO
IE=-10μA, IC=0
Collector cut-off current
ICBO VCB=-20V, IE=0
Emitter cut-off current
IEBO
VEB=-4V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=-10V, IC=-500mA
VCE=-5V, IC=-1A
Collector-emitter saturation voltage
VCE(sat) IC=-500mA, IB=-50mA
Base-emitter saturation voltage
VBE(sat) IC=-500mA, IB=-50mA
Transition frequency
fT
VCE=-10V, IC=-50mA, f=200MHz
Collector output capacitance
Cob VCB=-10V, IE=0, f=1MHz
2SB766 (PNP)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
-30
V
-25
V
-5
V
-0.1 μA
-0.1 μA
85
340
50
-0.2 -0.4
V
-0.85 -1.2
V
200
MHz
20
30
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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