2SB1424 Datasheet, PDF (1/2 Pages) Rohm – Low Vce(sat) Transistor (-20V, -3A)

Plastic-Encapsulate Transistors
FEATURES
• Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA).
• Excellent DC current gain characterisitics.
• Complementary the 2SD2150.
2SB1424 (PNP)
Maximum Ratings (Ta=25 unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-6
V
Collector Current -Continuous
IC
-3
A
Collector Power dissipation
Storage Temperature
PC
0.5
W
Tstg
-55to +150
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=-50μA IE=0
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output Capacitance
VCEO
VEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cobo
IC=-1mA IB=0
IE=-50μA IC=0
VCB=-20V IE=0
VEB=-5V,IC=0
VCE=-2V IC=-100μA
IC=-2A IB=-0.1A
VCE=-2V,IC=-0.5A,
f=100MHz
VCB=-10V f=1MHz IE=0
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
-20
V
-20
V
-6
V
-0.1 μA
-0.1 μA
120
390
-0.5 V
240
MHz
-
35
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
120-270
AEQ
R
180-390
AER
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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