2SB1132 Datasheet, PDF (1/2 Pages) Rohm – Medium Power Transistor

Plastic-Encapsulate Transistors
FEATURES
• Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA
• Compliments 2SD1664
2SB1132 (PNP)
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-40
VCEO
-32
VEBO
-5
IC
1
PC
500
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS ( @ Ta=25
Parameter
Symbol
unless otherwise specified)
Test conditions
Collector-base breakdown voltage
VCBO
IC=-50μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=-50μA,IC=0
Collector cut-off current
ICBO
VCB=-20V,IE=0
Emitter cut-off current
IEBO
VEB=-4V,IC=0
DC current gain
hFE
VCE=-3V,IC=-100mA
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA
Transition frequency
fT
VCE=-5V,IC=-50mA,f=30MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
-40
V
-32
V
-5
V
-0.5
μA
-0.5
μA
82
390
-0.2 -0.5
V
150
MHz
20
30
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
80-180
BAP
Q
120-270
BAQ
R
180-390
BAR
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