2SB1073 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon PNP epitaxial planer type(For low-frequency amplification)

Plastic-Encapsulate Transistors
FEATURES
• Low collector-emitter saturation voltage V_CE(sat)
• Large peak collector current I_C
Maximum Ratings (Ta=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
-30
VCEO
-20
VEBO
-7
IC
-4
PC
0.5
TJ
150
Tstg
-55to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=-10μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC=-1mA,IB=0
Emitter-base breakdown voltage
VEBO
IE=-10μA,IC=0
Collector cut-off current
ICBO VCB=-30V,IE=0
Emitter cut-off current
IEBO
VEB=-7V,IC=0
DC current gain
hFE
VCE=-2V,IC=-2A
Collector-emitter saturation voltage
VCE(sat) IC=-3A,IB=-100mA
Transition frequency
fT
VCE=-6V,IC=-50mA,f=200MHz
Collector output capacitance
Cob VCB=-20V,IE=0,f=1MHz
2SB1073 (PNP)
1. BASE
2. COLLECTO
3. EMITTER
SOT-89
Min Typ Max Unit
-30
V
-20
V
-7
V
-0.1
μA
-0.1
μA
120
315
-1
V
120
MHz
40
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Q
120-200
IQ
R
180-320
IR
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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