2SA733 Datasheet, PDF (1/2 Pages) NEC – PNP SILICON TRANSISTOR

Plastic-Encapsulate Transistors
FEATURES
Collector-Base Voltage
Complement to C945
MARKING: CS
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-60
V_CEO
-50
V_EBO
-5
I_C
0.15
PC
0.2
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC= -5uA,IE=0
Collector-emitter breakdown voltage
VCEO
IC= -1mA , IB=0
Emitter-base breakdown voltage
VEBO
IE= -50uA, IC=0
Collector cut-off current
ICBO
VCB= -60 V , IE=0
Emitter cut-off current
IEBO
VEB= -5 V , IC=0
DC current gain
hFE
VCE= -6 V, IC= -1mA
Collector-emitter saturation voltage
VCE(sat) IC= -100mA, IB=- 10mA
Base-emitter voltage
VBE(on)
VCE=-6V,IC=-1.0mA
Transition frequency
fT
VCE=-6V,IC=-10mA
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHZ
Noise figure
VCE=-6V,IC=-0.3mA,
NF
Rg=10kΩ,f=100HZ
A733 ^(PNP)
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
Min
-60
-50
-5
120
-0.58
50
Typ
-0.18
-0.62
4.5
Max Unit
V
V
V
-0.1 uA
-0.1 uA
475
-0.3
V
-0.68
V
MHz
7
pF
6
20
dB
CLASSIFICATIONOF h_FE
Rank
Range
L
120-220
H
220-475
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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