2SA1015 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)

Plastic-Encapsulate Transistors
FEATURES
High voltage and high current
Excellent hFE Linearity
Low niose ,Complementary to C1815
A1015 ^(PNP)
MARKING: BA
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
V_CBO
-50
V_CEO
-50
V_EBO
-5
I_C
0.15
PC
0.2
T_J
150
Tstg
-55 to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
VCBO IC= -100u A, IE=0
-50
VCEO
IC= -0.1mA, IB=0
-50
VEBO
IE= -100 u A, IC=0
-5
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
ICB
VCB=-50V , IE=0
IOCE
VCE= -50V , IB=0
IOEB
VEB=- 5V, IC=0
hOFE
VCE=-6V, IC= -2mA
130
VCE(sat) IC=-100 mA, IB= -10mA
VBE(sat) IC=-100 mA, IB= -10mA
VCE=-10V, IC= -1mA
fT
80
f=30MHz
Typ Max Unit
V
V
V
-0.1
uA
-0.1
uA
-0.1
uA
400
-0.3
V
-1.1
V
MHz
CLASSIFICATIONOF h_FE
Rank
Range
L
130-200
H
200-400
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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