2N7002 Datasheet, PDF (1/4 Pages) Pan Jit International Inc. – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Small Signal MOSFET Transistor
FEATURES
z High Density Cell Design For Low
R_DS(ON)。
z Voltage Controlled Small Switch.
z Rugged and Reliable.
z High Saturation Current Capability.
2N7002
APPLICATIONS
z N-channel enhancement mode effect transistor.
z Switching application.
ORDERING INFORMATION
Type No.
Marking
2N7002
7002/702/72*
SOT-23
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
V_DSS
V_DGR
V_GSS
I_D
P_D
R_θJA
Drain-Source voltage
Drain-Gate voltage(R_GS≤1MΩ)
Gate -Source voltage - continuous
-Non Repetitive (t_p<50μs)
Maximum Drain current -continuous
-Pulsed
Power Dissipation
Thermal resistance,Junction-to-Ambient
60
60
±20
±40
115
800
180
600
Units
V
V
V
mA
mW
℃/W
T_J, Tstg
Junction and Storage Temperature
-50-150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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