MA4AGSW4 Datasheet, PDF (5/6 Pages) Tyco Electronics – AIGAAS SP4T PIN DIODE SWITCH

AlGaAs SP4T PIN Diode Switch
Assembly Considerations
The following precautions should be observed to avoid
damaging these chips.
Cleanliness
These chips should be handled in a clean environment. Do not
attempt to clean die after installation.
Electro-Static Sensitivity
These Devices are considered ESD Class1. Proper ESD
techniques should be used when handling these devices.
General Handling
The protective polymer coating on the active areas of these die
provides scratch and impact protection, particularly for the
metal airbridge which contacts the diode’s anode. Die should
primarily be handled with vacuum pickups, or alternatively
with plastic tweezers.
Mounting Techniques
These AlGaAs devices are designed to be mounted with
electrically conductive silver epoxy or with a lower
temperature solder perform, which is not rich in Sn content.
MA4AGSW4
V 1.00
Solder Die Attachment
All die attach and bonding methods should be compatible with
gold metal. Solder which does not scavange gold, such as
80Au/20Sn or Sn62/Pb36/Ag2 is recommended. Do not
expose die to a temperature greater than 300 °C for more than
10 seconds.
Electrically Conductive Epoxy
Die Attachment
Assembly can be preheated to approximately 125 °C. Use a
controlled thickness of approximately 2 mils for best electrical
and thermal conductivity. Cure epoxy as per manufacturer’s
schedule. For extended cure times, temperatures should be
kept below 150 °C.
Ribbon/Wire Bonding
Wedge thermocompression bonding or ball bonding may be
used to attach ribbons or wires to the RF bonding pads. Gold
ribbons should be 1/4 x 3 mil sq. for all RF ports for lowest
inductance and best microwave performance.
Operation of the MA4AGSW4
The Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the
Remaining Isolated Ports achieves operation of the MA4AGSW Series of AlGaAs PIN Switches. The Backside Area of
the Die is the RF and DC Return Ground Plane. The DC Return is achieved on Common Port J1. Constant Current
Sources should supply the DC Control Currents. The Diode voltages at these Bias Nodes will not exceed + 1.6 volts
( + 1.4 volts typical for Supply Currents up to + 30 mA). In the Low Loss State, the Series Diode must be Forward
Biased and the Shunt Diode Reverse Biased. For All the Isolated Ports, the Shunt Diode is Forward Biased and the
Series Diode is Reverse Biased. The Bias Network Design should yield > 30 dB RF to DC Isolation.
Best Insertion Loss, P1dB, IP3, and Switching Speed is Achieved by using a Voltage Pull-up Resistor in the DC Return
Path, (J1). A Minimum Value of | -2 V | is recommended at this Return Node, which is achievable with a Standard,
+ 5 V TTL Controlled PIN Diode Driver.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
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