MA4E1339 Datasheet, PDF (3/7 Pages) Tyco Electronics – Silicon Medium Barrier Schottky Diodes

Silicon Medium Barrier
Schottky Diodes
Also Offering
RoHS Compliant
Equivalent Parts
Maximum Ratings 25 °C (unless otherwise specified)^*
Parameter
Unit
Operating Temperature
°C
Storage Temperature
°C
Total Power Dissipation (RF and D.C.)
mW
Continuous Forward Current
mA
Surge Forward Current, @ t<10 millisec
mA
Reverse Voltage
V
Soldering Temperature (Standard Part #)
°C
Soldering Temperature (RoHS Compliant Part #)
°C
* Exceeding these limits may cause permanent damage.
** Please refer to Application Note M538 for surface mounting instructions.
MA4E1339 Series
V6
Values
-55 to +125
-55 to +125
250
30
100
20
+235 for 5 sec.**
+260 for 5 sec.**
Electrical Specifications @ T_A = +25 °C
Parameter
Condition
Forward Voltage
Delta Forward Current
I_F = 1 mA
I_F = 1 mA
Forward Voltage
Total Capacitance
Reverse Leakage Current
Reverse Voltage Breakdown
I_F = 10 mA
V_R = 0 V
F = 1 MHz
V_R = 15 V
I_R = 10 μA
Symbol
V_F
V_F
V_F
C_T
I_R
V_B
Specification
410 mV max.
20 mV max.
For series pair and unconnected
pair configurations
1.0 V max.
1.2 pF max.
200 nA max.
20 V min.
3
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