MA4E1338 Datasheet, PDF (3/7 Pages) Tyco Electronics – Silicon Medium Barrier Schottky Diodes

Silicon Medium Barrier
Schottky Diodes
Also Offering
RoHS Compliant
Equivalent Parts
MA4E1338 Series
V4
Maximum Ratings @ 25 °C (unless otherwise specified)¹
Parameter
Unit
Operating Temperature
°C
Storage Temperature
°C
Total Power Dissipation
mW
(RF and D.C.)
Continuous Forward Current
mA
Surge Forward Current, @ t < 10 ms
mA
Reverse Voltage
V
Soldering Temperature (Standard Part #)
°C
Soldering Temperature (RoHS Compliant Part #)
°C
Values
-55 to +125
-55 to +125
250
30
100
8
+235 for 5 sec.
+260 for 5 sec.
Operation of this device above any one of the Maximum Rated parameters may cause permanent damage.
* Please refer to Application Note M538 for surface mounting instructions.
Electrical Specifications @ +25 °C
Parameter
Condition
Forward Voltage
Delta Forward Voltage
I_F = 1 mA
I_F = 1 mA
Forward Voltage
Total Capacitance
Reverse Leakage Current
Reverse Voltage Breakdown
I_F = 10 mA
V_R = 0 V
F = 1 MHz
V_R = 1 V
I_R = 10 µA
Symbol
V_F
Δ V_F
V_F
C_T
I_R
Vb
Specification
360 mV max.
20 mV max.
(for series pair and unconnected pair
configurations)
500 mV max.
1.0 pF max.
100 nA max.
8 V min.
3
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