MRF426 Datasheet, PDF (2/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I_C = 1.0 Adc, V_CE = 5.0 Vdc)
h_FE
10
35
—
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_CB = 30 Vdc, I_E = 0, f = 1.0 MHz)
FUNCTIONAL TESTS (SSB)
C_ob
—
60
80
pF
Common–Emitter Amplifier Gain
(V_CC = 28 Vdc, P_out = 25 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, I_CQ = 25 mA)
Collector Efficiency
(V_CC = 28 Vdc, P_out = 25 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, I_CQ = 25 mA)
Intermodulation Distortion (2)
(V_CC = 28 Vdc, P_out = 25 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, I_CQ = 25 mA)
Load Mismatch
(V_CC = 28 Vdc, P_out = 25 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, I_CQ = 25 mA, VSWR 30:1 at All Phase Angles)
CLASS A PERFORMANCE
G_PE
η
IMD_(d3)
ψ
22
25
—
dB
35
—
—
%
—
–35
–30
dB
No Degradation in Output Power
Intermodulation Distortion (2) and Power Gain
(V_CC = 28 Vdc, P_out = 8.0 W (PEP), f1 = 30 MHz,
f2 = 30.001 MHz, I_CQ = 1.2 Adc)
G_PE
—
23.5
—
dB
IMD_(d3)
—
–40
—
IMD_(d5)
—
–55
—
NOTE:
2. To Mil–Std–1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.
BIAS
INPUT
RFC1
C6 C7
L3
CR1
L4
C8
C9
RFC2
L2
C3
RF
INPUT
L1
C1
C2
R1
C5
DUT
C4
+
28 Vdc
-
RF OUTPUT
C1, C2 — ARCO 469, 190ā–ā780 pF
C3, C4 — ARCO 464, 25ā–ā280 pF
C5 — 120 pF Dipped Mica
C6, C7 — 100 µF, 15 Vdc
C8 — 680 pF F.T. Allen Bradley
C9 — 1.0 µF 35 V Tantalum
CR1 — 1N4997
L1 — 3 Turns #16 0.25″ ID
L2 — 6 Turns #16 0.5″ ID
L3 — 7 Turns #20 0.38″ ID
L4 — 10 µH Molded Choke Delevan
RFC1 — Ferroxcube VK200/20–4B
RFC2 — 3–Ferroxcube 5653065–3B
RF — Input/Output Connectors UG53 A/µ
R1 — 10 Ω 1/2 Watt 10%
Adjust Bias (Base) for I_CQ = 20 mA with No RF Applied
Figure 1. 30 MHz Linear Test Circuit
2