MRF393 Datasheet, PDF (2/4 Pages) Motorola, Inc – BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current (VCB = 30 Vdc, IE = 0)
ON CHARACTERISTICS (1)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICBO
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc)
hFE
DYNAMIC CHARACTERISTICS (1)
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz)
Cob
FUNCTIONAL TESTS (2) — See Figure 1
Common–Emitter Amplifier Power Gain
Gpe
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz)
Collector Efficiency
η
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz)
Load Mismatch
ψ
(VCC = 28 Vdc, Pout = 100 W, f = 500 MHz,
VSWR = 30:1, all phase angles)
NOTES:
1. Each transistor chip measured separately.
2. Both transistor chips operating in push–pull amplifier.
Min
Typ
Max
Unit
30
—
—
Vdc
60
—
—
Vdc
4.0
—
—
Vdc
—
—
5.0
mAdc
20
—
100
—
40
75
95
pF
7.5
8.5
—
dB
50
55
—
%
No Degradation in Output Power
B1
C1
C3
C2
L1
Z1
C4
Z2
L2
D.U.T.
C10
C9
L5
C11
L3
B2
C7
Z3
Z5
C5
C6
Z4
Z6
L4
C8
C14
C13
L6
C15
+ 28 V
C12
C16
C1, C2, C7, C8 — 240 pF 100 mil Chip Cap
C3 — 15 pF 100 mil Chip Cap
C4 — 24 pF 100 mil Chip Cap
C5 — 33 pF 100 mil Chip Cap
C6 — 12 pF 100 mil Chip Cap
C9, C13 — 1000 pF 100 mil Chip Cap
C10, C14 — 680 pF Feedthru Cap
C11, C15 — 0.1 µF Ceramic Disc Cap
C12, C16 — 50 µF 50 V
L1, L2 — 0.15 µH Molded Choke with Ferrite Bead
L3, L4 — 2–1/2 Turns #20 AWG 0.200″ ID
L5, L6 — 3–1/2 Turns #18 AWG 0.200″ ID
B1, B2 — Balun 50 Ω Semi Rigid Coax, 86 mil OD, 4″ Long
Z1, Z2 — 850 mil Long x 125 mil W. Microstrip
Z3, Z4 — 200 mil Long x 125 mil W. Microstrip
Z5, Z6 — 800 mil Long x 125 mil W. Microstrip
Board Material — 0.0325″ Teflon–Fiberglass, ε_r = 2.56,
Board Material — 1 oz. Copper Clad both sides.
Figure 1. 500 MHz Test Fixture
REV 7
2