MRF323 Datasheet, PDF (2/5 Pages) Motorola, Inc – RF POWER TRANSISTOR NPN SILICON

ELECTRICAL CHARACTERISTICS — continued (T_C = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(V_CB = 28 Vdc, I_E = 0, f = 1.0 MHz)
C_ob
—
20
24
pF
FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(V_CC = 28 Vdc, P_out = 20 W, f = 400 MHz)
Collector Efficiency
(V_CC = 28 Vdc, P_out = 20 W, f = 400 MHz)
Load Mismatch
(V_CC = 28 Vdc, P_out = 20 W, f = 400 MHz,
VSWR = 30:1 all phase angles)
G_PE
10
11
—
dB
η
50
60
—
%
ψ
No Degradation in Output Power
RF INPUT
Z1
C1
Z2
L1
C2
L3
DUT
C3 C4
L4
C8 ^C9
+
C10
+
- ^C11
28 V
-
C12
Z3
Z4
RF OUTPUT
L2
C5
C6
C7
R1
C1, C2, C6 — 1.0ā–ā20 pF Johanson Trimmer (JMC 5501)
C3, C4 — 47 pF ATC Chip Capacitor
C5, C8 — 0.1 µF Erie Redcap
C7 — 0.5ā–ā10 pF Johanson Trimmer (JMC 5201)
C9, C10 — 680 pF Feedthru
C11 — 1.0 µF 50 Volt Tantalum
C12 — 0.018 µF Vitramon Chip Capacitor
L1 — 0.33 µH Molded Choke with Ferroxcube Bead
L1 — (Ferroxcube 56–590–65/4B) on Ground End
L2 — 6 Turns #20 Enamel, 1/4″ ID, Closewound
L3 — 4 Turns #20 Enamel, 1/8″ ID, Closewound
L4 — Ferroxcube VK200–19/4B
R1 — 5.1 Ω 1/4 Watt
Z1 — Microstrip 0.1″ W x 1.35″ L
Z2 — Microstrip 0.1″ W x 0.55″ L
Z3 — Microstrip 0.1″ W x 0.8″ L
Z4 — Microstrip 0.1″ W x 1.75″ L
Board — Glass Teflon ε_r = 2.56, t = 0.062″
Input/Output Connectors — Type N
Figure 1. 400 MHz Test Circuit Schematic
2