MA4E2508 Datasheet, PDF (2/4 Pages) Tyco Electronics – SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

SURMOUNT^TM Low and Medium & High Barrier Silicon
Schottky Diodes: Anti-Parallel Pair
MA4E2508 Series
V2
Electrical Specifications @ 25 °C
Model
Number
Type
Recommended
Frequency Range
MA4E2508L
Low
Barrier
DC - 18 GHz
Vf @ 1 mA
( mV )
330 Max
300 Typ
Ct @ 0 V
( pF )
0.24 Max
0.18 Typ
Rt Slope Resistance
( Vf1 - Vf2 ) / (10.5mA-9.5mA )
(Ω)
16 Typ
20 Max
MA4E2508M
Medium
Barrier
DC - 18 GHz
MA4E2508H
High
Barrier
DC - 18 GHz
Rt is the dynamic slope resistance where Rt = Rs + Rj , where
Rj =26 / Idc ( Idc is in mA) and Rs is the Ohmic Resistance.
470 Max
420 Typ
0.24 Max
0.18 Typ
12 Typ
18 Max
700 Max
650 Typ
0.24 Max
0.18 Typ
6 Typ
8 Max
Max Forward Voltage Difference ∆Vf @ 1 mA: 10 mV
Handling
All semiconductor chips should be handled with care
to avoid damage or contamination from perspiration
and skin oils. The use of plastic tipped tweezers or
vacuum pickups is strongly recommended for
individual components. The top surface of the die
has a protective polyimide coating to minimize
damage.
The rugged construction of these SurMount devices
allows the use of standard handling and die attach
techniques. It is important to note that industry
standard electrostatic discharge (ESD) control is
required at all times, due to the sensitive nature of
Schottky junctions.
Bulk handling should insure that abrasion and
Absolute Maximum Ratings @ 25 °C
(Unless Otherwise Noted) ¹
Parameter
Absolute Maximum
Operating Temperature
Storage Temperature
Junction Temperature
Forward Current
-40 °C to +125 °C
-40 °C to +150 °C
+175 °C
20 mA
Reverse Voltage
5V
RF C.W. Incident Power
+ 20 dBm
RF & DC Dissipated Power
50 mW
1. Operation of this device above any one of these parameters
may cause permanent damage.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
Die Bonding
Die attach for these devices is made simple through
the use of surface mount die attach technology.
Mounting pads are conveniently located on the
bottom surface of these devices, and are opposite
the active junction. The devices are well suited for
higher temperature solder attachment onto hard
substrates. 80Au/20Sn and Sn63/Pb37/Ag2 solders
are acceptable for usage.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When soldering
to soft substrates, it is recommended to use a
lead-tin interface at the circuit board mounting pads.
Position the die so that its mounting pads are
aligned with the circuit board mounting pads. Reflow
the solder paste by applying Equal heat to the circuit
at both die-mounting pads. The solder joint must Not
be made one at a time, creating un-equal heat flow
and thermal stress. Solder reflow should Not be
performed by causing heat to flow through the top
surface of the die. Since the HMIC glass is
transparent, the edges of the mounting pads can be
visually inspected through the die after die attach is
completed.
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