MA4AGSW3 Datasheet, PDF (2/6 Pages) Tyco Electronics – AlGaAs SP3T PIN Diode Switch

AlGaAs SP3T PIN Diode Switch
MA4AGSW3
V 1.00
Electrical Specifications @ T_A = 25 °C, +/- 10 mA Bias Current
(On-Wafer Measurements)
Parameters
Insertion Loss
Isolation
Input Return Loss
Output Return Loss
Switching Speed
RF Specifications
Frequency Minimum
0.05 - 18 GHz
-
18 - 50 GHz
0.05 - 18 GHz
38
18 - 50 GHz
24
0.05 - 18 GHz
-
18 - 50 GHz
0.05 - 18 GHz
-
18 - 50 GHz
10 GHz
-
Typical
0.6
0.8
45
31
21
24
26
20
20
Maximum
0.7
1.1
-
-
-
-
Units
dB
dB
dB
dB
ns
NOTES:
1. Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver
output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve
20 ns rise and fall times.
Typical Driver Connections
Control Level (DC Current)
J2
J3
J4
-10 mA
+10 mA
+10 mA
+10 mA
-10 mA
+10 mA
+10 mA
+10 mA
-10 mA
J2-J1
Low Loss
RF Output Conditions
J3-J1
Isolation
J4-J1
Isolation
Isolation
Low Loss
Isolation
Isolation
Isolation
Low Loss
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
2
n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]