MA02107AF Datasheet, PDF (2/4 Pages) Tyco Electronics – 3.4 V, 1.2 W RF Power Amplifier IC

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Electrical Specifications: T_S = 35 °C¹, Z₀ = 50 Ω ^2,3
Parameter
Test Conditions
Units Min
Typ
Max
Frequency
MHz
900
942
Output Power
dBm 30.0
30.8
Power Gain
dB
30.8
Power Added Efficiency
%
45
55
Input Return Loss
2^nd Harmonics
3^rd Harmonics
Thermal Resistance
dB
10
dBc
3^rd Stage FET to solder point of pin 13
dBc
o_C/W
15
-35
-29
-50
-45
41
Stability
+3.0 V < V_CC < +5.0 V, P_OUT < +31 dBm,
VSWR < 5:1, -40ºC < T_C < +85ºC, RBW
= 3 MHz max hold
All spurs < -60 dBc
1. Ts is the temperature measured at the soldering point of pin 13.
2. Unless otherwise specified, input power is 0 dBm, V_DD is +3.45 V, and test frequency is 900 MHz.
3. The output is externally matched to 50 ohms.
Absolute Maximum Ratings¹
Parameter
Max Input Power
Operating Voltages
Operating Temperature, Ts
Channel Temperature
Storage Temperature
Absolute Maximum
+6 dBm
+5.0 volts
-40 °C to +70 °C
+150 °C
-40 °C to +150 °C
1. Exceeding any one or combination of these limits may cause permanent damage.
MA02107AF
V 1.0
Application Information
Static Sensitivity
Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when
handling these devices.
Board Layout
Sample Test Board
Specifications subject to change without notice.
50 Ohm Lead Transition
n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]
2
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