UF2820R Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz

RF MOSFET Power Transistor, 2OW, 28V
100 - 500 MHz
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
..
Absolute Maximum Ratings at 25°C
Parameter
1 Symbol 1 Rating
Drain-SourceVoltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
StorageTemperature
Thermal Resistance
V_OS
V _GS
I_OS
PO
T
T_ST0
8_JC
6.5
20
4
61
200
-55 to +150
2.66
Units
V
V
A
w
“C
“C
“C/W
UF2820R
Electrical Characteristics at 25°C
Input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Load Mismatch Tolerance
V,,=28.0 V, F=l .OMHz
Cass
30
PF ^{V,,=28.0 V, F=l .OMHz}
CRss
8
PF ^{V,,=28.0 V, F=l .OMHz}
GP
10
-
dB V,,=28.0 V, 1,,=100.0 mA, P,fl20.0 W, F=500 MHz
00
50
-
% V,,=28.0 V, I,,=1 00.0 mA, P,s20.0 W, F=500 MHz
VSWR-T -
2O:l
- V,,=28.0 V, l,,=lOO.O mA, P,e20.0 W, F=500 MHz
Specifications Subject to Change Without Notice.
MIA-COM, Inc.