UF2820P Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz

RF MOSFET Power Transistor, 2OW, 28V
100 - 500 MHz
Features
l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l Common Source Configuration
l Lower Noise Floor
UF2820P
v2.00
Absolute Maximum Ratings at 25°C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
1 Gate-Source Voltage
Drain-Source Current
Power Dissipation
Junction Temperature
V ₀₅
65
I VGS I
20
IDS
2.8
PD
53
T,
200
V
Iv I
A
W
“C
I StorageTemperature
1 Thermal Resistance
I TSTG ^{1 -55to+150 I “C (}
Electrical Characteristics at 25°C
Parameter
Symbol
Min
Max Units
lest Conditions
Drain-Source Breakdown Voltage
BV,,,
65
-
V V,,=O.O V, 1,,=4.0 mA‘
I
Drain-Source Leakage Current
‘DSS
2.0 mA V,,=28.0 V, V,,=O.O V’
1
1
,
I
Gate-Source Leakage Current
‘ass
2.0 pA V&20 v, v,,=o.o V’
GateThreshold Voltage
Forward Transconductance
V
GWHI
GM
2.0 6.0
.160
-
V V&O.0 V, 1,,=200.0 mA’
S V&O.0 V, 1,,=200.0 mA, AV,,=l .O V, 80 us Pulse’
_Input Capacitance
C _ES
14 pF V,,=28.0 V, F=l .OMHz’
Output Capacitance
Cass
10 pF ‘.‘,,=28.0 V, F=l .OMHz’
Reverse Capacitance
CRSS
4.8 pF V,,=28.0 V, F=l .OMHz’
Power Gain
Drain Efficiency
Load Mismatch Tolerance
* Per Side
I
G._/
10
-
dB
I
,
I
V,,=28.0
--
V,
1_--,,=20_-~0.0
mA.
P-.._=20.0
“VI
W. F=500
MHz
qD
50
-
% V,D=28.0 V, 1,,=200.0 mA, P,U,=20.0 W, F=500 MHz
I
I
1
VSWR-T
- 1 2O:l 1 - ( V,,=28.0 V, 1,,=200.0 mA, P,,p20.0 W, FSOO MHz
1
Specifications Subject to Change Without Notice.
MIA-COM, inc.