UF281OOM Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, lOOW, 28V 100 - 500 MHz

an AMP company
RF MOSFET Power
100 - 500 MHz
Transistor,
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
lOOW, 28V
UF281 OOM
Absolute Maximum Ratings at 25°C
pi
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
PD
250
W
T,
200
“C
T _STG
-55 to +150
“C
EJl _O
0.7
“Ciw
I4
&w
t.74
.m4 1 ale
II
505
a&b,
am 1 a?4
P
m
a¶
ooc 1 ace
Electrical Characteristics at 25°C
I Parameter
( Symbol 1 Min 1 Max 1 Units 1
Test Conditions
1
Drain-Source Breakdown Voltage
Drain-Source LeakageCurrent
BVDSS
65
‘OS5
-
V V,,=O.O V, I,,=150 mA’
I
3.0
mA v,,=2a.o v. vo,=o.o v
Gate-Source Leakage Current
‘GSS
3.0
pA v,,=20 v, v,,=o.o V’
Gate Threshold Voltage
ForwardTransconductance
V
2.0
6.0
V V,,=lO.O V, 1,,=300.0 mA‘
GSCTHI
GM
1.5
-
S V,,=lO.O V, 1,,=3000.0 mA, ~v,,=l.OV, 80 ps Pulse’
input Capacitance
C _ISS
135
pF v,=2a.o v, F=l .o MHz’
Output Capacitance
C _OS.5
90
pF V,s=28.0 V, F=l .O MHz’
Reverse Capacitance
C _RSS
24
pF v,,=2a.ovF,=I .OMHZ*
Power Gain
Drain Efficiency
%
10
-
dB V,_-,_-=28.0 V, 1,,=600.0 mA, P,,=lOO.O W. F=500 MHz
I
50
-
% v,,=%.O V, 1,,=600.0 mA, P,,=lOO.O W, F=500 MHz
Return Loss
10
-
dB V,,=28.0 V, 1,,=600.0 mA, PO,,=1 00.0 W, F=500 MHz
Load Mismatch Tolerance
VSWR-T
-
3O:l
-
v,,=28.0 V. 1,,=600.0 mA, P,,,.=100.0 W, F=500 MHz
* Per Side
Specifications Subject to Change Without Notice.
M/A-COM, inc.