UF2810P Datasheet, PDF (1/2 Pages) Tyco Electronics – RF MOSFET Power Transistor, 10W, 28V 100-500MHz

an AMP company
RF MOSFET Power
100 - 500 MHz
Transistor,
IOW, 28V
Features
l N-Channel Enhancement Mode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l Common Source Configuration
l Lower Noise Floor
l 100 MHz to 500 MHz Operation
Absolute Maximum Ratings at 25°C
UF281 OP
Electrical Characteristics at 25°C
L 1 1% 1 246
077
.097
N 1 3.61 1 4.37 1 J42 1 .I72
Output Capacitance
Reverse Capacitance
C _oss
0,
5
PF ^{V,,=28.0 V, I==1 .O MHz’}
-
2.4
pF VDs=28.0 V, F=l .O MHz’
Power Gain
Drain Efficiency
9D ^GP
10
50
-
dB V,,=28.0 V, I,,,=1 00.0 mA, PO,,,=10.0 W, F=500 MHz
-
% V,,=28.0 V, I,,=1 00.0 mA, P,& 0.0 W, F=500 MHz
Load Mismatch Tolerance
VSWR-T
-
203
-
V,,=28.0 V, IDo= 00.0 mA, Poe1 0.0 W, F=500 MHz
* Per Side
pecifications Subject to Change Without Notice.