UF28100V Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 15W, 28V 100-500MHz

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RF MOSFET Power Transistor, IOOW, 28V
100 - 500 MHz
UF281 OOV
v2.00
Features
l N-Channel Enhancement &lode Device
l DMOS Structure
l Lower Capacitances for Broadband Operation
l High Saturated Output Power
l Lower Noise Figure Than Competitive Devices
Absolute Maximum Ratings at 25°C
I Parameter
( Symbol 1 Rating
( Units
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Power Dissipation
V _DS
65
V
V _GS
20
V
‘DS
12
A
PD
250
W
JunctionTemperature
TJ
200
“C
Storage Temperature
Thermal Resistance
T _sic
8 _IP
-55 to +150
“C
0.7
“crw
_E_l_e__c..t_r~ic~ al Characteristics at 25°C
Parameter
Symbol
Min Max Units
lest Conditions
Drain-Source Breakdown Voltage
BV,,,
65
-
V
V,.=O.O V. I& 5.0 mA
Drain-Source LeakageCurrent
Gate-Source Leakage Current
Gate Threshold Voltage
I _DSS
‘GSS
V _GSIW
3.0
mA V,,=28.0 V, V,,=O.O V’
,
,
) 3.0 ] fl 1 v,,=2ov, vDs=o.o v
2.0
I
6.0
V
I _{V,,=lO.O V, 1,,=300.0 mA‘}
ForwardTransconductance
GM
1.5
-
S V,,=10.0 V, 1,,=3000.0 mA, AV,,=l .O V, 80 us Pulse’
input Capacitance
c _15s
-
135
pF V,,=28.0 V, F=l .O MHz’
Output Capacitance
Reverse Capacitance
C _ass
C _RSS
90
PF ^{V,,=28.0 V, F=l .O MHz’}
24
pF V,,=28.0 V, F=l .O MHz’
Power Gain
Drain Efficiency
.
Load Mismatch Tolerance
GP
VSWR-T
10
-
dB V,,=28.0 V, 1,,=600.0 mA, P,,$OO.O W, F=SOO MHz
50
-
% V,,=28.0 V, 1,,=600.0 mA, P,,,=lOO.O W. F=500 MHZ
-
3O:l
-
V,,=28.0 V, lDD=800.0 mA, PbbylOO.0 W, F=500 MHz
- Per Side
Specifications Subject to Change Wiihout Notice.
M/A-COM, Inc.