UF28100H Datasheet, PDF (1/3 Pages) Tyco Electronics – RF MOSFET Power Transistor, 100W, 28V 100 - 500 MHz

RF MOSFET Power Transistor, iOOW, 28V
100 - 500 MHz
UF281 OOH
Features
N-Channel Enhancement Mode Device
DMOS Structure
Lower Capacitances for Broadband Operation
High Saturated Output Power
Lower Noise Figure Than Competitive Devices
Input Capacitance
Qutput Capacitance
ReverseCapacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
* Per Side
c _IS
-
13.5
pF V,,=28.0 V, F=l .O MHz’
C _OS
90
PF ^{VD,=28.0 V, F=l.O MHz’}
C _RSS
‘24
pF V,,=28.0 V, F=l .O MHz‘
GP
10
-
dB V,,=28.0 V, 1,,=800.0 mA, P,ylOO.O W, F=500 MHz
%
50
-
% V,,=28.0 V, l,0=600.0 mA, P,&OO.O W, F&O0 MHz
RL
10
-
dB V,,=28.0 V, 1,,=600.0 mA, P,elOO.O W, F=500 MHz
VSWR-T
-
3O:l
-
V,,=28.0 V, 1,,=600.0 mA, P,,~lOO.O W, F=500 MHz