SW10-0313 Datasheet, PDF (1/3 Pages) Tyco Electronics – Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input

Matched GaAs SPDT Switch, DC - 3
GHz with TTL/CMOS Control Input ^{V 4.00}
Features
n Integral TTL Driver
n Low DC Power Consumption
n Surface Mount Package
n Low Cost/High Performance
n 50 Ohm Nominal Impedance
Description
CR-9
M/A-COM’s SW10-0313 is a GaAs FET SPDT absorptive
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device offers
excellent performance and repeatability from DC to 3 GHz
while maintaining low power consumption. The
SW10-0313 is ideally suited for use where fast speed, low
power consumption and broadband applications are
required.
Electrical Specifications^1,2 T_A = +25°C
Parameter
Test Conditions
Frequency
Units
Min
Typ
Max
Insertion Loss
—
DC - 3000 MHz
dB
—
0.8
1.2
DC - 2000 MHz
dB
—
0.7
1.1
DC - 1000 MHz
dB
—
0.7
0.9
DC - 500 MHz
dB
—
0.6
0.8
VSWR
—
DC - 3000 MHz
Ratio
—
1.2:1
1.4:1
DC - 2000 MHz
Ratio
—
1.2:1 1.35:1
DC - 1000 MHz
Ratio
—
1.2:1 1.35:1
DC - 500 MHz
Ratio
—
1.1:1
1.3:1
Isolation
—
DC - 3000 MHz
dB
35
40
—
DC - 2000 MHz
dB
45
50
—
DC - 1000 MHz
dB
45
50
—
DC - 500 MHz
dB
50
55
—
Trise, Tfall
10% to 90%
—
ns
—
50
—
Ton, Toff
1.3V CTL to 90% / 10%
—
ns
—
150
—
Transients
In-Band
—
mV
—
50
—
1 dB Compression
Input Power
0.05 GHz
dBm
—
+25
—
0.5 GHz to 3 GHz
dBm
—
+30
—
IP2
Two-Tone Input Power up to +5 dBm
0.05 GHz
dBm
—
+60
—
0.5 GHz to 3 GHz
dBm
—
+65
—
IP3
Two-Tone Input Power up to +5 dBm
0.05 GHz
dBm
—
+40
—
0.5 GHz to 3 GHz
dBm
—
+46
—
Vin Low
0V to 0.8V
—
µA
—
—
1
Vin High
2.0V to 5.0V
—
µA
—
—
1
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.