SW05-0311 Datasheet, PDF (1/3 Pages) Tyco Electronics – Match GaAs SPST Switch, DC - 3 GHz with TTL/CMOS Control Input

Match GaAs SPST Switch, DC - 3 GHz
with TTL/CMOS Control Input
V 3.00
Features
n Integral TTL Driver
n Low DC Power Consumption
n Surface Mount Package
n Low Cost/High Performance
n 50 Ohm Nominal Impedance
Description
M/A-COM’s SW05-0311 is a GaAs FET SPST absorptive
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device offers
excellent performance and repeatability from DC to 3 GHz
while maintaining low power consumption. The
SW05-0311 is ideally suited for use where fast speed, low
power consumption and broadband applications are
required.
CR-9
Electrical Specifications^1,2 T_A = +25°C
Parameter
Insertion Loss
VSWR
Isolation
Trise, Tfall
Ton, Toff
Transients
1 dB Compression
IP2
IP3
Vin Low
Vin High
Test Conditions
—
—
—
10% to 90%
D1.3V CTL to 90% / 10%
In-Band
Input Power
Two-Tone Input Power up to
+5 dBm
Two-Tone Input Power up to
+5 dBm
0V to 0.8V
2.0V to 5.0V
Frequency
Units
Min
Typ
Max
DC - 3000 MHz
dB
—
1.0
1.3
DC - 2000 MHz
dB
—
0.8
1.2
DC - 1000 MHz
dB
—
0.7
1.0
DC - 500 MHz
dB
—
0.6
0.8
DC - 3000 MHz
Ratio
—
1.4:1
1.5:1
DC - 2000 MHz
Ratio
—
1.3:1
1.4:1
DC - 1000 MHz
Ratio
—
1.2:1
1.3:1
DC - 500 MHz
Ratio
—
1.1:1
1.2:1
DC - 3000 MHz
dB
25
29
—
DC - 2000 MHz
dB
35
40
—
DC - 1000 MHz
dB
35
60
—
DC - 500 MHz
dB
65
70
—
—
ns
—
50
—
—
ns
—
150
—
—
mV
—
50
—
0.05 GHz
dBm
—
+21
—
0.5 GHz to 3 GHz
dBm
—
+27
—
0.05 GHz
dBm
—
+62
—
0.5 GHz to 3 GHz
dBm
—
+68
—
0.05 GHz
dBm
—
+40
—
0.5 GHz to 3 GHz
dBm
—
+46
—
—
µA
—
—
1
—
µA
—
—
1
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.