SW-475 Datasheet, PDF (1/4 Pages) Tyco Electronics – SPDT High Isolation Terminated Switch 0.5 - 3.0 GHz

SPDT High Isolation Terminated Switch
0.5 - 3.0 GHz
Features
n Positive Voltage Control (0 / +5 V)
n High Isolation (53 dB typ. @ 0.9 GHz,
50 dB typ @ 1.9 GHz)
n 50-Ohm Internal Terminations
n Low Insertion Loss (0.6 dB typ. @ 0.9 GHz,
0.7 dB typ. @ 1.9 GHz)
n 4 mm FQFP-N 16-Lead Package
Description
The M/A-COM SW-475 GaAs monolithic switch provides
high isolation in a low-cost, plastic surface mount package.
The SW -475 is ideal for applications across a broad range
of frequencies including synthesizer switching, transmit /
receive switching, switch matrices and filter banks in
systems such as radio and cellular equipment, PCS, GPS,
and fiber optic modules.
M/A-COM fabricates the SW-475 using an 0.5-micron gate
length MESFET process. The process features full chip
passivation for performance and reliability.
Handling Procedures
The following precautions should be observed to avoid
damage:
Static Sensitivity
Gallium arsenide integrated circuits are ESD sensitive and
can be damaged by static electricity. Use proper ESD
precautions when handling these devices.
Truth Table
Functional Schematic
16 15 14 13
RF2
1
2
RF1
12
11
3
10
4
9
V1
V2
5 6 78
PIN Configuration
Pin Function Description Pin Function Description
——
—
17 GND RF ground
1 RF2
(pad)
RF port 16 GND RF ground
2 GND RF ground 15 GND RF ground
3 GND RF ground 14 GND RF ground
4 V1 Control 1 13 GND RF ground
5
V2
Control 2 12 RF1
RF port
6 GND RF ground 11 GND RF ground
7 RFC RF port 10 GND RF ground
8 GND RF ground 9 GND RF ground
Mode
V1
(Control)
Positive¹
0
Negative²
1
V2
RFC - RFC -
RF1
RF2
1
ON
OFF
0
OFF
ON
1. External DC blocking capacitors required on all RF ports.
We recommend 47 pF.
2. 3.0 V < VC < 8.0 V.
Logic Level
VLO “0” =
VHIGH 1” =
Voltage Level
0 ± 0.2 V
VC ± 0.2 V