SW-313 Datasheet, PDF (1/3 Pages) Tyco Electronics – Matched GaAs SPDT Switch, DC - 3 GHz with TTL/CMOS Control Input

Matched GaAs SPDT Switch, DC - 3
GHz with TTL/CMOS Control Input ^{V 3.00}
Features
n Integral TTL Driver
n Low DC Power Consumption
n Fast Switching Speed: 7 ns Typical
n Surface Mount Package
n 50 Ohm Nominal Impedance
n MIL-STD-883 Screening Available
Description
CR-9
M/A-COM’s SW-313 is a GaAs FET SPDT absorptive
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device offers
excellent performance and repeatability from DC to 3 GHz
while maintaining low power consumption. The SW-313 is
ideally suited for use where fast speed, low power
consumption and broadband applications are required.
MIL-STD-883 screening available.
Electrical Specifications^1,2
(From –55°C to +85°C)
Parameter
Test Conditions
Frequency
Units
Min
Insertion Loss
—
DC - 3000 MHz
dB
—
DC - 2000 MHz
dB
—
DC - 1000 MHz
dB
—
DC - 500 MHz
dB
—
VSWR
—
DC - 3000 MHz
Ratio
—
DC - 2000 MHz
Ratio
—
DC - 1000 MHz
Ratio
—
DC - 500 MHz
Ratio
—
Isolation
—
DC - 3000 MHz
dB
35
DC - 2000 MHz
dB
45
DC - 1000 MHz
dB
50
DC - 500 MHz
dB
55
Trise, Tfall
10% to 90%
—
ns
—
Ton, Toff
1.3V CTL to 90% / 10%
—
ns
—
Transients
In-Band
—
mV
—
1 dB Compression
Input Power
0.05 GHz
dBm
—
0.5 GHz to 3 GHz
dBm
—
IP2
Two-Tone Input Power up to +5 dBm
0.05 GHz
dBm
—
0.5 GHz to 3 GHz
dBm
—
IP3
Two-Tone Input Power up to +5 dBm
0.05 GHz
dBm
—
0.5 GHz to 3 GHz
dBm
—
Vin Low
0V to 0.8V
—
µA
—
Vin High
2.0V to 5.0V
—
µA
—
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.
Typ
Max
—
1.2
—
1.1
—
0.9
—
0.8
—
1.4:1
—
1.35:1
—
1.35:1
—
1.3:1
—
—
—
—
—
—
—
—
7
—
18
—
25
—
+25
—
+30
—
+60
—
+65
—
+40
—
+46
—
—
1
—
1