SW-312 Datasheet, PDF (1/3 Pages) Tyco Electronics – GaAs SPDT Reflective Switch, DC - 3 GHz with TTL/CMOS Control Input

GaAs SPDT Reflective Switch, DC - 3
GHz with TTL/CMOS Control Input ^{V 3.00}
Features
n Integral TTL Driver
n Ultra Low Power Consumption
n Fast Switching Speed: 7 ns Typical
n Surface Mount Package
n 50 Ohm Nominal Impedance
n MIL-STD-883 Screening Available
Description
M/A-COM’s SW-312 is a GaAs FET SPDT reflective
switch with integral silicon ASIC driver. Packaged in a
16-lead ceramic surface mount package, this device
offers excellent performance and repeatability from DC
to 3 GHz while maintaining low power consumption.
The SW-312 is ideally suited for use where fast speed,
low power consumption and broadband applications are
required. MIL-STD-883 screening available.
CR-9
Electrical Specifications^1,2
(From –55°C to +85°C)
Parameter
Test Conditions
Frequency
Units
Min
Insertion Loss
—
DC - 3000 MHz
dB
—
DC - 2000 MHz
dB
—
DC - 1000 MHz
dB
—
DC - 500 MHz
dB
—
VSWR
—
DC - 3000 MHz
Ratio
—
DC - 2000 MHz
Ratio
—
DC - 1000 MHz
Ratio
—
DC - 500 MHz
Ratio
—
Isolation
—
DC - 3000 MHz
dB
30
DC - 2000 MHz
dB
35
DC - 1000 MHz
dB
40
DC - 500 MHz
dB
45
Trise, Tfall
10% to 90%
—
ns
—
Ton, Toff
1.3V CTL to 90% / 10%
—
ns
—
Transients
In-Band
—
mV
—
1 dB Compression
Input Power
0.05 GHz
dBm
—
0.5 GHz to 3 GHz
dBm
—
IP2
Two-Tone Input Power up to +5 dBm
0.05 GHz
dBm
—
0.5 GHz to 3 GHz
dBm
—
IP3
Two-Tone Input Power up to +5 dBm
0.05 GHz
dBm
—
0.5 GHz to 3 GHz
dBm
—
Vin Low
0V to 0.8V
—
µA
—
Vin High
2.0V to 5.0V
—
µA
—
1. All specifications apply when operated with bias voltages of +5V for Vcc and –5V for Vee.
2. When DC blocks are used, a 10K ohm return to GND is required on the RFC port.
Typ
—
—
—
—
—
—
—
—
—
—
—
—
7
18
25
+25
+30
+60
+65
+40
+46
—
—
Max
1.2
1.1
0.9
0.8
1.5:1
1.4:1
1.4:1
1.3:1
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—
—
—
—
—
—
—
—
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