SW-279 Datasheet, PDF (1/2 Pages) Tyco Electronics – High Power GaAs SPDT Switch DC - 2.5 GHz

High Power GaAs SPDT Switch
DC - 2.5 GHz
SW-279
V2.00
Features
• +36 dBm Typ. 1 dB Compression Point, -8V Supply
• +65 dBm Typ. 3rd Order Intercept Point, -8V Supply
• Low Insertion Loss: 0.4 dB Typical
• Low Power Consumption: 100 µW
• Fast Switching Speed
• Low Cost SOIC8 Plastic Package
• Tape and Reel Packaging Available¹
Description
M/A-COM’s SW-279 is a GaAs MMIC SPDT switch in a low cost
SOIC 8-lead surface mount plastic package. The SW-279 is ideal-
ly suited for use where very low power consumption is
required. Typical applications include transmit/receive switch-
ing, switch matrices, and filter banks in systems such as: radio
and cellular equipment, PCM, GPS, fiber optic modules, and
other battery powered radio equipment.
SO-8
PIN 8
Orientation
mark
.1497-.1574
(3.80-4.00)
-B-
.2284-.2440
(5.80-6.20)
.010(0.25) M B M
PIN 1
.1890-.1968
(4.80-5.00)
-A-
.0532-.0688
(1.35-1.75)
0°-8°
-C-
.0099-0.0196
x 45° Chamfer
(0.25-0.50)
.004 (0.10)
.050(1.27) BSC.
.0040-.0098
(0.10-0.25)
.013-.020 TYP.
(0.33-0.51)
.016-.050
(0.40-1.27)
.0075-0.0098
(0.19-0.25)
.010(0.25) M C A M B S
8- Lead SOP outline dimensions
Narrow body .150
(All dimensions per JEDEC No. MS-012-AA, Issue C)
Dimensions in ( ) are in mm.
Unless Otherwise Noted: .xxx = ± 0.010 (.xx = ± 0.25)
.xx = ± 0.02 (.x = ±0.5)
The SW-279 is fabricated with a monolithic GaAs MMIC using a
mature 1 micron process. The process features full chip passiva-
tion for increased performance and reliability.
Electrical Specifications, T_A = +25°C
Parameter
Test Conditions²
Ordering Information
Model No.
SW-279 PIN
SW-279TR
SW-279RTR
Unit
Insertion Loss
Isolation
VSWR
Trise, Tfall
Ton, Toff
Transients
One dB
Compression Point
3rd Order
Intercept
DC – 2.0 GHz
DC – 1.0 GHz
DC – 0.5 GHz
DC – 0.1 GHz
DC – 2.0 GHz
DC – 1.0 GHz
DC – 0.5 GHz
DC – 0.1 GHz
DC – 2.0 GHz
10% to 90% RF, 90% to 10% RF
50% Control to 90% RF, 50% Control to 10% RF
In Band
Input Power (5V Supply/Control)
Input Power (8V Supply/Control)
0.9 GHz
0.9 GHz
Measured Relative (5V Supply/Control)
to Input Power (8V Supply/Control)
(for two-tone input power up to +10 dBm)
0.9 GHz
0.9 GHz
dB
dB
dB
dB
dB
dB
dB
dB
nS
nS
mV
dBm
dBm
dBm
dBm
Package
SOIC 8 Lead
Forward Tape & Reel
Reverse Tape & Reel
Min.
14
28
35
35
Typ.
Max
0.6
0.8
0.4
0.6
0.35
0.5
0.2
0.4
16
32
38
38
1.2:1
30
35
12
33
35.8
61
65
1. Refer to “Tape and Reel Packaging” Section, or contact factory.
2. All specifications apply when operated with bias voltages of 0V for Vin Low and 5 to 10V for Vin Hi, and 50 Ohm impedance at all RF ports,
unless otherwise specified. High power (greater than 1W) handling specifications apply to cold switches only. For input powers under 1W, hot
switching can be used. The high control voltage must be within +/- 0.2V of the supply voltage. The RF ports must be blocked outside of the
package from ground or any other voltage.
Specifications Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel. [phone]
Fax [phone]
s Asia/Pacific: Tel. [phone]
Fax [phone]
1
s Europe: Tel. [phone]
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