PH3135-65M Datasheet, PDF (1/2 Pages) Tyco Electronics – Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty

Radar Pulsed Power Transistor, 65 Watts,
3.10-3.50 GHz, 100 µs Pulse, 10% Duty
8/9/02
Rev. 1
Features
Q NPN Silicon Microwave Power Transistor
Q Common Base Configuration
Q Broadband Class C Operation
Q High Efficiency Interdigitated Geometry
Q Gold Metalization System
Q Internal Input and Output Impedance Matching
Q Hermetic Metal/Ceramic Package
Outline Drawing
Absolute Maximum Ratings @ 25 °C
Parameter
Symbol
Collector-Emitter Voltage VCES
Rating
65
Emitter-Base Voltage
V_EBO
3.0
Collector Current (Peak)
I_C
7.7
Total Power Dissipation
@ +45 °C
Storage Temperature
P_TOT
369
T_STG -65 to +200
Junction Temperature
T_j
200
Units
V
V
A
W
°C
°C
Electrical Characteristics @ 25 °C
Parameter
Symbol Min. Max. Units
Collector-Emitter Breakdown BV_CES
65
-
V I_C=40 mA
Test Conditions
Collector-Emitter Leakage
I_CES
-
7.5
mA V_CE=40 V
Thermal Resistance
Input Power
Power Gain
Collector Efficiency
Input Return Loss
Load Mismatch Tolerance
R_TH(JC)
-
0.42 °C/W V_CC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz
P_IN
-
11.6
W V_CC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz
G_P
7.5
-
dB V_CC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz
η
35
-
% V_CC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz
RL
6
-
dB V_CC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz
VSWR-T -
2:1
- V_CC=36 V, Po = 65 W, Freq= 3.1, 3.3 and 3.5 GHz