PH3135-30M Datasheet, PDF (1/2 Pages) Tyco Electronics – Radar Pulsed Power Transistor, 3OW, IOOms Pulse, 10% Duty 3.1 - 3.5 GHz

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Radar Pulsed Power Transistor, 3OW, IOOps Pulse, 10% Duty
3.1 - 3.5 GHz
PH3135-30M
Features
l NPN Silicon Microwave Power Transistor
l Common Base Configuration
l Broadband Class C Operation
l High Effkiency Interdigitated Geometry
l Diffused Emitter Ballasting Resistors
l Gold Metalization System
l Internal Input and Output Impedance Matching
l Hermetic Metal/Ceramic Package
SJC
_
:22 85:
65, _
-:16.51)
433
<13.:5:-,
v2.00
Absolute Maximum Ratings at 25°C
Parameter
) Symbol
Rating
Collector-Emitter Voltage
V
65
CES
Emitter-Base Voltage
V _ES0
3.0
Collector Current (Peak)
I^
3.6
Total Power Dissipation
JunctionTemperature
StorageTemperature
PTOT
TJ
T
ST0
250
200
-65 to +200
Units
V
V
A
w
“C
“C
,167~ i-110
7:4.24’.25>
,103
C2.54) -
F--
034’031
Electrical Characteristics at 25°C
Parameter
Symbol
Min
Collector-Emitter Breakdown Voltage
BV,,,
65
Collector-Emitter Leakage Current
Thermal Resistance
Output Power
Power Gajn
Collector Efficiency
Input Return Loss
‘CES
RTH(JC,
POUT
30
GP
7.0
35
%
RL
6
Load MismatchTolerance
VSWR-T -
Load Mismatch Stability
VSWR-S -
Max Units
Test Conditions
-
V
I,=20 mA
3.0
mA v,,=40 v
0.7 “C/W Vcc=36 V, P,,=6.0 W, F=3.1,3.3,3.5 GHz
-
w Vcc=36 V. P;,=6.0 W, F=3.1,3.3,3.5 GHz
-
dB V,,=36 V, P,,=6.0 W, F=3.1,3.3, 3.5 GHz
-
o/b Vcc=36 V, P,,=6.0 W, F=3.1,3.3,3.5 GHz
-
dB V,,=36 V, P,,=6.0 W. F=3.1,3.3,3.5 GHz
3:l
- Vcc=36 V, P,,=6.0 W, F=3.1,3.3,3.5 GHz
2:l
- V,,=36V, P,,=6.0 W, F=3.1,3.3,3.5GHz
Broadband Test Fixture Impedances
F(GHz)
z,,(n)
z,F(n)
3.10
21 + j2.0
13.8-j11.7
3.30
19-j2.4
7.7 - j8.2
3.50
16 -jS.l
5.3 - j5.3
Specifications Subject to Change Without Notice.