PH3134-11S Datasheet, PDF (1/2 Pages) Tyco Electronics – Radar Pulsed Power Transistor, 11 W, lms Pulse, 10% Duty 3.1 - 3.4 GHz

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Radar Pulsed Power Transistor,
3.1 - 3.4 GHz
11 W, lps Pulse, 10% Duty
PH3134-11s
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Absolute Maximum Ratings at 25°C
I
-.152-.x0
(3.86-25)
;2.I.0504I>--/- -I
,250
75.35>-7
I I ,130
-7(3.30:~
.034'.031
StorageTemperature
T _STG
-65 to +200
“‘2
UNLESS
IT-ERWISE
NCTEC, TZLESANCES
ARE
INCES
=.305’
:MJLLIMETERS
=.!3MW>
Electrical Characteristics at 25°C
Parameter
Symbol Min Max Units
lest Conditions
I
1
I
I
Collector-Emitter Breakdown Voltage
BV,,,
60
-
V
I,=1 2.5 mA
Collector-Emitter Leakage Current
Thermal Resistance
input Power
Power Gain
Collector Efficiency
input Return Loss
‘Es
R _TWC,
P _IN
GP
8.0
%
35
RL
6
1.25
1.4
1.74
-
-
-
mA
“CM’
w
dB
%
dB
V,,=36 V
I’,,=36 V, P,,,=ll W, F=3.1,3.25,3.4 GHz
V,c=36 V, P,,,.=ll W, F=3.1,3.25,3.4 GHz
V,,=38 V, Pour=1 1 W, F=3.1, 3.25,3.4 GHz
I’,,=36 V. P,,=ll W. F=3.1,3.25,3.4 GHz
I’,,=36 V, P,,,=ll W, F=3.1,3.25,3.4 GHz
Load Mismatch Tolerance
VSWR-T
-
2:l
-
Vcc=36 V, P,el 1 W, F=3.25 GHz
Broadband Test Fixture Impedances
F(GHz)
z,,m
z,Fcm
3.10
17.5 - j8.5
90.0 + j37.0
3.25
15.0- j8.2
58.0 + j7.0
I
I
-
A_-
3.40
13.0 - j8.0
36.0 + j14.5
Specifications Subject to Change Without Notice.