PH2729-8.5M Datasheet, PDF (1/2 Pages) Tyco Electronics – Radar Pulsed Power Transistor, 8.5W, 100us Pulse, 10% Duty 2.7 - 2.9 GHz

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Radar Pulsed Power Transistor, 8.5W, loops Pulse, 10% Duty
2.7 - 2.9 GHz
PH2729-8SM
Features
NPM Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic MtxaKeramic Package
903
(22.86:
v2.00
Absolute Maximum Ratings at 25°C
Electrical Characteristics at 25°C
Parameter
Symbol
Min
Collector-Emitter Breakdown Voltage
BVcEs 65
Collector-EmitterLeakage Current
Thermal Resistance
Output Power
Power Gain
I-^{Collector Efficiency}
Input Return Loss
‘ES
RTHIJC~
POUT 8.5
GP
8.1
I T(c Id
RL
6
Load Mismatch Tolerance
VSWR-T -
Load Mismatch Stablilitv
VSWR-S -
Max
-
1.5
2.2
-
-
-I
-
3:l
1.51
Units
lest Conditions
V I,=1 0 mA
mA v,,=40 v
“C/W’ V,,=36 V, P,,=1.3 W, F~2.7, 2.8, 2.9 GHz
W V,,=36 V, P&.3 W, F=2.7,2.8,2.9 GHz
dB 1 V,,=36 V, P,,=1.3 W, F-2.7, 2.8,2.9 GHz
% I V,,=36 V, P&.3 W, F=2.7, 2.8.2.9 GHz
dB ( V,,=36 V, P,,=1.3 W, F=2.7,2.8,2.9 GHz
- j V,,=36 V, P,,=l.3 W, F=2.7,2.8,2.9 GHz
- / V-,=36 V, P..,=1.3 W, F=2.7. 2.8,2.9 GHz
Broadband Test Fixture Impedances
F(GHz)
z,,(Q)
z,,(n)
.
2.70
40-j12
25 + j3.5
2.80
38-j14
20 + j2.0
-
2.90
35-j16
16ej2.4
Specifications Subject to Change Without Notice.
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